Dopants and Defects in Semiconductors VI: Compound and 2D Semiconductors
FOCUS · L28 ·
Presentations
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Single Quantum Defects in h-BN and ZnO
COFFEE_KLATCH · Invited
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Authors
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Nicholas R Jungwirth
- Cornell University
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Theoretical studies of the magnetic properties of Mn trimers on the (110) GaAs surface
ORAL
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Authors
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Fhokrul Islam
- Linnaeus University
- Department of Physics and Electrical Engineering, Linnaeus University, 391 82 Kalmar, Sweden
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M.R. Mahani
- Department of Materials and Nanophysics, KTH Royal Institute of Technology
- KTH
- KTH, Royal Institute of Technology
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Davide Grossi
- Eindhoven Univ of Tech
- Technische Universiteit Eindhoven
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Paul Koenraad
- Eindhoven University of Technology
- Technische Universiteit Eindhoven
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C. M. Canali
- Linnaeus University
- Department of Physics and Electrical Engineering, Linnaeus University, 391 82 Kalmar, Sweden
- Department of Physics and Electrical Engineering, Linnaeus University, SE-391 82 Kalmar, Sweden
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Nuclear quantum effects at metal-insulator transition of (Ga,Mn)As
ORAL
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Authors
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Hannes Raebiger
- Yokohama National University
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Soungmin Bae
- Yokohama National University
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Magnetic interactions in Mn assemblies in a GaAs (110) surface.
ORAL
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Authors
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Paul Koenraad
- Eindhoven Univ of Tech
- Eindhoven University of Technology
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Davide Grossi
- Eindhoven Univ of Tech
- Technische Universiteit Eindhoven
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Fhokrul Islam
- Linnaeus University
- Department of Physics and Electrical Engineering, Linnaeus University, 391 82 Kalmar, Sweden
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M.R. Mahani
- Department of Materials and Nanophysics, KTH Royal Institute of Technology
- KTH
- KTH, Royal Institute of Technology
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C. M. Canali
- Linnaeus University
- Department of Physics and Electrical Engineering, Linnaeus University, 391 82 Kalmar, Sweden
- Department of Physics and Electrical Engineering, Linnaeus University, SE-391 82 Kalmar, Sweden
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Michael Flatt\'e
- Univ of Iowa
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Generalized Multiband Typical Medium Dynamical Cluster Approximation: Application to (Ga,Mn)N
ORAL
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Authors
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Yi Zhang
- Louisiana State Univ - Baton Rouge
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Ryky Nelson
- RWTH Aachen University
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Elisha Siddiqui
- Louisiana State Univ - Baton Rouge
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Ka Ming Tam
- Department of Physics and Astronomy, Louisiana State University
- Department of Physics, Louisiana State University
- Louisiana State Univ - Baton Rouge
- Louisiana State University
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Unjong Yu
- GIST, Gwangju, Korea
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T. Berlijn
- Oak Ridge National Laboratory
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Wei Ku
- Tsung-Dao Lee Insittute, China & Shanghai Jiao Tong University, China
- Brookhaven National Laboratory
- Shanghai Jiao Tong University
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Vidhyadhiraja Sudhindra
- Jawaharlal Nehru Centre For Advanced Scientific Research
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Juana Moreno
- Department of Physics and Astronomy, Louisiana State University
- Louisiana State Univ - Baton Rouge
- Louisiana State University
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Mark Jarrell
- Department of Physics and Astronomy, Louisiana State University
- Department of Physics, Louisiana State University
- Louisiana State Univ - Baton Rouge
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TEM-EELS Investigation of Boron and Phosphorus Passivated 4H-SiC/SiO$_{2}$ Interface Structures
ORAL
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Authors
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Christopher Klingshirn
- University of Maryland College Park
- University of Maryland, College Park
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Joshua Taillon
- University of Maryland, College Park
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Gang Liu
- Rutgers University
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Sarit Dhar
- Auburn University
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Leonard Feldman
- Rutgers University
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Tsvetanka Zheleva
- US Army Research Laboratory
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Aivars Lelis
- US Army Research Laboratory
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Lourdes Salamanca-Riba
- University of Maryland College Park
- University of Maryland, College Park
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Investigation of 3C-SiC/SiO$_{\mathrm{2}}$ interfacial point defects from ab initio g-tensor calculations and electron paramagnetic resonance measurements
ORAL
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Authors
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T. A. Nugraha
- Max-Planck-Inst. fuer Eisenforschung
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M. Rohrmueller
- University of Paderborn
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U. Gerstmann
- University of Paderborn
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S. Greulich-Weber
- Solar Weaver GmbH
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A. Stellhorn
- University of Paderborn
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J. L. Cantin
- Pierre and Marie Curie University
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J. von Bardeleben
- Pierre and Marie Curie University
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W. G. Schmidt
- University of Paderborn
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S. Wippermann
- Max-Planck-Inst. fuer Eisenforschung
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Electronic structure properties of deep defects in hBN
ORAL
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Authors
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Pratibha Dev
- Howard University
- Department of Physics and Astronomy, Howard University
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Evolution of electronic structure in highly charge doped MoS2 compounds
ORAL
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Authors
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Mohammed Bin Subhan
- Univ Coll London
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Matthew Watson
- Diamond Light Source
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Zhongkai Liu
- ShanghaiTech University
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Andrew Walters
- Diamond Light Source
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Moritz Hoesch
- Diamond Light Source
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Chris Howard
- Univ Coll London
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A universal parametric representation for weak-localization magnetoconductance in 2D and 3D systems
ORAL
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Authors
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Guy Matmon
- London Centre for Nanotechnology, University College London
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Eran Ginossar
- University of Surrey
- Advanced Technology Institute, University of Surrey
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Byron Villis
- London Centre for Nanotechnology, University College London
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Alex Kölker
- London Centre for Nanotechnology, University College London
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Tingbin Lim
- London Centre for Nanotechnology, University College London
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Neil Curson
- London Centre for Nanotechnology
- London Centre for Nanotechnology and UCL Department of Electronic and Electrical Engineering, University College London
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Juerong Li
- Advanced Technology Institute, University of Surrey
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Ben Murdin
- Advanced Technology Institute, University of Surrey
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Andrew Fisher
- University College London
- London Centre for Nanotechnology and UCL Department of Physics & Astronomy, University College London
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Gabriel Aeppli
- Paul Scherrer Institute and Department of Physics, ETH Zurich
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First-principles study of the effects of Silicon doping on the Schottky barrier of TiSi$_{2}$/Si interfaces
ORAL
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Authors
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Han Wang
- Rensselaer Polytechnic Institute
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Eduardo C. Silva
- GlobalFoundries, Malta, NY 12020 USA
- GLOBALFOUNDRIES
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Damien West
- Rensselaer Polytechnic Institute
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Yi-Yang Sun
- Rensselaer Polytechnic Institute
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Oscar D. Restrepo
- GlobalFoundries, Malta, NY 12020 USA
- GLOBALFOUNDRIES
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S.B. Zhang
- Department of Physics, Applied Physics, & Astronomy, Rensselaer Polytechnic Institute, USA
- Rensselaer Polytechnic Institute
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Murali Kota
- GlobalFoundries, Malta, NY 12020 USA
- GLOBALFOUNDRIES
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Two-dimensional massless Dirac fermions and Fermi level matching with Dirac points in alkaline-metal doped few-layer black phosphorus
ORAL
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Authors
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Seung Su Baik
- Korea Institute for Advanced Study
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Young-Woo Son
- Korea Inst for Advanced Study
- Korea Institute for Advanced Study
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Hyoung Joon Choi
- Yonsei University
- Department of Physics and IPAP, Yonsei University, Seoul 03722, Korea and Center for Computational Studies of Advanced Electronic Material Properties
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Pinning of topological solitons at extrinsic defects in a quasi one-dimensional charge density wave
ORAL
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Authors
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Samad Razzaq
- Max Planck Inst fuer Eisenforschung GmbH
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Stefan Wippermann
- Max Planck Inst fuer Eisenforschung GmbH
- Max-Planck-Inst f\"ur Eisenforschung
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