Diffusion of Vacancies in 4H-SiC

Defect centers in silicon carbide (SiC) have emerged as strong contenders in the quest to realize quantum devices due to the material’s lower cost as compared to its counterpart diamond, and due to the microfabrication techniques now available and favorable optical emission wavelengths and spin properties. We investigate the stability and diffusion of silicon vacancies of varying charge states in 4H-SiC and under the influence of strain, using density-functional-theory, which should serve as an invaluable guide in controlling defect position within devices.