New type of in-gap states at a spinel/perovskite interface: combined resonant soft x-ray photoemission spectroscopy and first-principles study.
ORAL
Abstract
Oxygen vacancies in oxide heterostructures create a plethora of electronic phenomena not observed in the stoichiometric systems. In this talk we will discuss the presence of a new type of in-gap states at the spinel/perovskite $\gamma$-Al$_2$O$_3$/SrTiO$_3$ interface [1,2], as observed in soft x-ray resonant photoemission spectroscopy. Based on \textit{ab initio} calculations and crystal-field analysis of different atomic environments, we identify the origin of this behavior and we argue on the possible origin of the extraordinarily high electron mobility measured in this heterostructure [2].\newline [1] P. Schuetz et al., in preparation.\newline [2] Y. Z. Chen et al., Nature Communications 4, 1371 (2013).
*This work was financially supported by the Deutsche Forschungsgemeinschaft SFB/TR 49 and SFB 1170.
–