Ultrafast Electron Dynamics in hBN-Encapsulated Graphene

ORAL

Abstract

We perform ultrafast transient absorption spectroscopy on high quality graphene encapsulated in hexagonal boron nitride and non-encapsulated graphene on a silicon-silicon dioxide substrate, using a near-IR pump and a mid-IR probe. We measure the transient absorption signal as a function of graphene doping and pump fluence for both room temperature and 77K, and compare our results to models taking into account the interband and intraband electronic transitions in graphene. We compare our experimental carrier lifetimes to theoretical models to investigate the electron decay mechanisms in high quality graphene.

*S. D. acknowledges government support under and awarded by DoD, Air Force Office of Scientific Research, National Defense Science and Engineering Graduate (NDSEG) Fellowship, 32 CFR 168a.

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Authors

  • Steven Drapcho

    • University of California - Berkeley

  • Long Ju

    • Cornell University

  • Guorui Chen

    • Fudan University

  • Yinchuan Lv

    • University of Illinois - Urbana Champaign

  • Ilyoun Na

    • University of California - Berkeley

  • Yuanbo Zhang

    • Fudan University

  • Feng Wang

    • University of California - Berkeley