Strain-Induced Anisotropic Fermi Contour of 2D Holes and Composite Fermions

We present experimental and theoretical results demonstrating strain-induced Fermi contour anisotropy of two-dimensional (2D) holes and composite fermions (CFs) confined to a (001) GaAs quantum well. We apply a tunable uniaxial strain to a thinned (001) GaAs wafer, glued to a piezoelectric actuator. When the 2D holes are subjected to an in-plane uniaxial strain, their band structure and Fermi contour become anisotropic by about 30{\%} even for a minute amount of strain, on the order of 10$^{\mathrm{-4}}$. Via measurements of commensurability oscillations, we determine the Fermi contour anisotropy for holes near zero magnetic field, and for CFs at high magnetic fields, as a function of uniaxial strain. The measured Fermi contour anisotropy of holes is consistent with the calculation results. The observed CF Fermi contour anisotropy also shows a strong dependence on the applied strain, which we compare quantitatively to that of the low-field holes.