Temperature Dependent Photocurrent Spectroscopy of Few Layer CuIn$_{\mathrm{7}}$Se$_{\mathrm{11}}$

Group III-VI based 2D semiconductor, due to their exotic optical properties, could possibly lead to multifunctional opto-electronic applications such as tunable photo detectors. Here, we report on the detailed study on temperature dependent photocurrent spectroscopy of few layer CuIn$_{\mathrm{7}}$Se$_{\mathrm{11}}$, mechanically exfoliated from crystals grown using chemical vapor transport technique. CuIn$_{\mathrm{7}}$Se$_{\mathrm{11}}$ photocurrent spectra reveals the information about the direct band gap, indirect band gap as well as the band gap variation with the temperature. Further, the gate voltage can be used to tune the wavelength dependent photoresponse nature of these materials. These key findings and comparative analysis of group III-VI based photo detectors will be discussed.