Electrical and Photoconductivity study on few layers ReSe$_{\mathrm{2}}$

Transition metal dichalcogenides (TMDs) have emerged as attractive materials for electronic and optoelectronic device applications due to their tunable band gap as a function of layers and easier to produce single atomic layer form, which could be potential pathways beyond CMOS technologies. Among the TMDs semiconductors, extensive research has been conducted on few compounds such as MoS$_{\mathrm{2}}$, WS$_{\mathrm{2}}$, and WSe$_{\mathrm{2}}$ focusing on electrical and optical properties of single-to-few atomic layers. These compounds show direct band gap transition when exfoliated to single layer from bulk crystals. However, there are other layered materials such as ReS$_{\mathrm{2}}$, ReSe$_{\mathrm{2}}$, InSe, etc. are recently reported displays direct band gap irrespective to the number of layers, makes promising application in optoelectronics. Here, we present an intrinsic electrical and photoconductivity study on less studied ReSe$_{\mathrm{2}}$ compound, mechanically exfoliated on to the Si/SiO$_{\mathrm{2}}$ substrate. The field-effect mobility at room temperature of few-layered ReSe$_{\mathrm{2}}$ device is \textasciitilde 10cm$^{\mathrm{2}}$/Vs. Hopefully we will also present the detail electrical transport properties of ReSe$_{\mathrm{2}}$ field-effect transistors as a function of temperature.