Voltage Controlled Perpendicular Magnetic Anisotropy.

POSTER

Abstract

Here we report the voltage controlled perpendicular magnetic anisotropy of a multilayer stack composed of P-type silicon substrate/ Gd2O3/ Co/ Pt grown by pulsed laser deposition (PLD) under ultra-high vacuum conditions. For examination of the voltage effect on magnetic properties of the samples, we performed magneto optical Kerr effect (MOKE) measurements. The results show a clear inverse relationship between voltage and coercivity. The exchange of oxygen ions which occurs at the interface between gadolinium oxide and cobalt may increase the cobalt oxide concentration within the optical interface layer. One potential application for this research could be the creation of a voltage controlled magnetic tunneling junction memory storage device. Proper implementation may be able to combine non-volatility with higher areal densities and low power consumption.

*NSF Research Experience for Faculty and Students at Undergraduate Institutions Program, UNL- MRSEC

Authors

  • Nicholas Noviasky

    • State University of New York at Oswego

  • Ildar Sabirianov

    • State University of New York at Oswego

  • Shi Cao

    • University of Nebraska at Lincoln
    • Univ of Nebraska - Lincoln

  • Xiaozhe Zhang

    • University of Nebraska at Lincoln

  • Andrei Sokolov

    • University of Nebraska at Lincoln

  • Eugene Kirianov

    • University of Nebraska at Lincoln

  • Peter Dowben

    • Department of Physics and Astronomy \& Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588
    • University of Nebraska - Lincoln
    • University of Nebraska at Lincoln
    • University of Nebraska-Lincoln

  • Carolina C. Ilie

    • State University of New York at Oswego