Dopants and Defects in Semiconductors IV: Nitrides
FOCUS · F28 ·
Presentations
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Defect related electrical and optical properties of AlN bulk crystals grown by physical vapor transport
COFFEE_KLATCH · Invited
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Authors
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Klaus Irmscher
- Leibniz Institute for Crystal Growth, Berlin
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Effects of Sc-doping on the structure and physical properties of AlN: first-principles studies
ORAL
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Authors
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Chengxin Wang
- Chengdu Green Energy and Green Manufacturing Technology R&D Center
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Zhifan Wang
- Chengdu Green Energy and Green Manufacturing Technology R&D Center
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yanning Zhang
- Beijing Computational Science Research Center
- University of Electronic Science and Technology of China
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Frequency-dependent EPR studies of strain localized around the Mg acceptor in free-standing GaN
ORAL
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Authors
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Ustun Sunay
- Univeristy of Alabama at Birmingham
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Mary Zvanut
- University of Alabama at Birmingham
- Univeristy of Alabama at Birmingham
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Jamiyanaa Dashdorj
- University of Alabama at Birmingham
- Univeristy of Alabama at Birmingham
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Jacob Leach
- Kyma Technologies
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Charge Transfer in Compensated GaN:Be Substrates Observed with Magnetic Resonance
ORAL
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Authors
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William Willoughby
- University of Alabama at Birmingham
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Mary Zvanut
- University of Alabama at Birmingham
- Univeristy of Alabama at Birmingham
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Jamiyanaa Dashdorj
- University of Alabama at Birmingham
- Univeristy of Alabama at Birmingham
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Michal Bockowski
- Institute of High Pressure Physics, Warsaw, Poland
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Mg acceptors and the ultraviolet band in Mg-doped GaN.
ORAL
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Authors
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Ibrahima Diallo
- Virginia Commonwealth Univ
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Denis Demchenko
- Virginia Commonwealth Univ
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Michael Reshchikov
- Virginia Commonwealth Univ
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Investigating doping effects in III-nitride materials by large-scale hybrid-functional calculations
ORAL
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Authors
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Ying-Chih Chen
- McGill University
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Qing Shi
- McGill University
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Vincent Michaud-Rioux
- McGill University
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Hong Guo
- McGill University
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Schrodinger-Poisson Modeling of Al$_{\mathrm{x}}$Ga$_{\mathrm{1-x}}$N/GaN Heterostructures Employing Tailored Depth-Dependent Aluminum Concentration for Polarization Grading
ORAL
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Authors
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Jeffrey Calame
- Naval Research Laboratory
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Igor Chernyavskiy
- Naval Research Laboratory
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Mario Ancona
- Naval Research Laboratory
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David Meyer
- Naval Research Laboratory
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Optoelectronic Properties of Point Defects in Gallium Nitride: A Many-Body Perturbation Theory Perspective
ORAL
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Authors
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Kirk Lewis
- Boston University
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Sahar Sharifzadeh
- Boston University
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Structural and electronic properties of ZnGeN$_2$
ORAL
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Authors
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Nicholas L. Adamski
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560, USA
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Zhen Zhu
- Materials Department, University of California, Santa Barbara, California 93106-5050, USA
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Darshana Wickramaratne
- Materials Department, University of California, Santa Barbara, California 93106-5050, USA
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Chris G. Van de Walle
- Materials Department, University of California, Santa Barbara, California 93106-5050, USA
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Electronic structure and $p$-type doping of ZnSnN$_{\mathrm{2}}$
ORAL
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Authors
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Tianshi Wang
- Univ of Delaware
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Anderson Janotti
- Univ of Delaware
- University of Delaware
- Department of Materials Science and Engineering, University of Delaware
- University of Deleware
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Chaoying Ni
- Univ of Delaware
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Nitrogen vacancy effects on the electronic structure of CrN
ORAL
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Authors
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Tomas Rojas
- Ohio University
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Sergio Ulloa
- Ohio Univ
- Ohio University
- Ohio University, Athens, OH, USA
- Ohio University, U.S.A.
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Prospects and limitations for $p$-type doping in boron nitride polymorphs
ORAL
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Authors
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Leigh Weston
- Materials Department, University of California, Santa Barbara
- University of California, Santa Barbara
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Chris G. Van de Walle
- Materials Department, University of California, Santa Barbara
- University of California, Santa Barbara
- Univ of California - Santa Barbara
- University of California - Santa Barbara
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