Surface Transport and Quantum Hall Effect in Ambipolar Black Phosphorus Double Quantum Wells
ORAL
Abstract
Quantum wells (QWs) is the most important class of devices in the study of two-dimensional (2D) systems. Here we demonstrate facile formation of black phosphorus-based wide QWs that host double layers of charge carriers. In contrast to tradition QWs, each 2D layer is ambipolar, and can be tuned into n-doped, p-doped or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with Land\'{e} $g$-factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double or wide QWs with unusual properties such as high anisotropy.
*FAME center; NSF/ECCS 1509958; National Science Foundation Cooperative Agreement No. DMR-1157490;
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