Low-temperature magneto-transport in topological insulator-ferromagnetic insulator heterostructures
ORAL
Abstract
The spin polarized surface states of a topological insulator (TI) have potential for topological spintronics applications wherein the surface states are used for electrically detecting and manipulating the magnetization of a ferromagnetic (FM) material. Heterostructures that interface a TI with a FM insulator are ideal in this context since they isolate the charge current to the topological insulator, thus allowing a clean probe of any phenomena related to spin-charge conversion between the TI surface states and the FM material. We use molecular beam epitaxy to deposit crystalline Bi$_{2}$Se$_{3}$ films on high-quality yttrium iron garnet (YIG) thin films [Wang \textit{et al}., Phys. Rev. Lett. \textbf{117}, 076601 (2016)] and report on the magneto-transport properties of these heterostructures at low temperature (400 mK \textless $T$ \textless 4.2 K). Our measurements show evidence for a magnetic coupling between the FM insulator and the TI thin film.
*This work was supported by C-SPIN, one of the six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.
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