Perpendicularly magnetized Mn-based binary films compatible with semiconductor in structure and technique

Ferromagnetic films with both high perpendicular anisotropy and good compatibility with semiconductors have great potential not only in semiconductor spintronic devices, but also in high-density integration of metallic spintronic functional devices like nonvolatile MRAM on semiconductor circuits [1]. Recently, we have grown the high-quality $L$1$_{\mathrm{0}}$-MnGa and $L$1$_{\mathrm{0}}$-MnAl films on GaAs by MBE, which show giant perpendicular magnetic anisotropy [2-5]. Moreover, annealing studies revealed the thermal stability of \quad them up to at least 350C, indicating its compatible with current semiconductor industry technique [3]. Here, we will present the orbital two-channel Kondo (2CK) effect observed in ferromagnetic $L$1$_{\mathrm{0}}$-MnAl and $L$1$_{\mathrm{0}}$-MnGa, which provide the first evidence for the presence of 2CK effect in a ferromagnet [6-8]. The tunneling magnetic resistivity of $L$1$_{\mathrm{0}}$-MnGa-based perpendicularly magnetic tunnel junctions will also be mentioned. \textbf{References: }[1]~\textit{Appl. Phys.} A 111 (2013) 379; [2] \textit{Adv. Mater. }24 (2012) 4547; [3]~\textit{Appl. Phys. Lett.} 102 (2013) 132403; [4] \textit{Appl. Phys. Lett.} 102 (2013) 152405; [5] \textit{Phys. Rev.} B 89 (2014) 220406(R); [6] \textit{Nature Commun}. 7 (2016) 10817; [7] \textit{Phys. Rev. }B 93 (2016) 195112; [8] \textit{Sci. Rep.} 6 (2016) 34549