Tailoring the electronic properties of semiconducting nanocrystal-solids: InAs embedded in SnS$_x$ matrices

ORAL

Abstract

Recent advances in wet chemical techniques enable the facile synthesis of nanocrystals (NCs) and their assembly into complex solid structures (NC-solids), offering exciting prospects for solar energy conversion, light emission and electronic applications. The properties of these composites are strongly determined by structural details at the NC/matrix interface and the composition of the embedding matrix. We carried out a systematic study of the interaction between InAs NCs and SnS$_x$ matrices using a grand canonical \emph{ab initio} thermodynamics approach to identify general trends for the stability of structural motifs possibly occurring at the NC/matrix interface. The resulting models have been used as a basis for \emph{ab initio} molecular dynamics calculations to investigate the impact of different mass densities and stoichiometries on the internal matrix structure and the NC-solids' electronic properties. We demonstrate that both the NC-matrix interface and the internal regions of the matrix show complex structural features, depending on specific synthesis conditions. Thus to obtain a detailed understanding of experimental data it is necessary to take into account such complex interfacial and matrix-internal structures beyond simplified NC-solid models.

*S. W. acknowledges BMBF NanoMatFutur grant 13N12972

Authors

  • Emilio Scalise

    • Max Planck Inst fuer Eisenforschung GmbH
  • Stefan Wippermann

    • Max Planck Inst fuer Eisenforschung GmbH
    • Max-Planck-Inst f\"ur Eisenforschung
  • Giulia Galli

    • Univ of Chicago and Argonne National Laboratory
    • Univ of Chicago
    • University of Chicago; Argonne National Laboratory
    • Institute for Molecular Engineering, University of Chicago; Argonne National Laboratory
    • Institute for Molecular Engineering, University of Chicago and Materials Science Division, Argonne Natl Lab
    • Institute for Molecular Engineering, University of Chicago; Materials Science Division, Argonne National Laboratory
    • Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637 and Materials Science Division, Argonne National Laboratory, Lemont, IL
    • Institute for Molecular Engineering, University of Chicago and Argonne Natl Lab
    • University of Chicago, Chicago, IL 60637, USA
    • The University of Chicago, Institute for Molecular Engineering and Argonne National Laboratory
    • Argonne National Laboratory and University of Chicago
    • Institute for Molecular Engineering, University of Chicago and Materials Science Division, Argonne National Laboratory
    • University of Chicago
    • The University of Chicago
    • University of Chicago and Argonne National Laboratory
  • Dmitri V. Talapin

    • The University of Chicago