Facile Fabrication of Graphene/MoS$_{\mathrm{2}}$ Heterostructure Devices on Arbitrary Substrates by Photolithography.

Atomically thin materials like graphene and transition metal dichalcogenides are ideal candidates to create ultra-thin electronics that is suitable for flexible substrates. However, high-yield and mass production of these heterostructures is a challenge. We developed a process to fabricate devices based on heterostructures of two-dimensional materials grown by CVD, using standard photolithography. We showed that the transfer and patterning processes do not degrade the structural integrity and the optical properties of the two-dimensional materials. Devices fabricated from CVD-grown graphene and MoS$_{\mathrm{2}}$ yield photoresponsivity higher than 800 AW$^{\mathrm{-1}}$ to 633nm laser, with no gate applied. This excellent performance is comparable or above photodetectors made with exfoliated flakes and electron-beam lithography, making this method very promising for large-scale optoelectronics applications.