Quantum Hall effect in Cd$_3$As$_2$ films

ORAL

Abstract

A well known semiconductor Cd$_3$As$_2$ is reentering the spotlight due to its unique electronic structure of three-dimensional Dirac semimetal. We have succeeded in fabricating high crystallinity and high mobility Cd$_3$As$_2$ thin films epitaxially grown on SrTiO$_3$ to observe quantum Hall effect at high magnetic fields up to 55 T. With a decrease in film thickness to 10 nm, the quantum Hall states exhibit various changes such as of degeneracy accompanied with topological phase transitions. Detailed electronic structures of subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness. Our findings and techniques pave the way for further investigation of quantum transport originating from the topological electronic structures in Cd$_3$As$_2$.

Authors

  • Masaki Uchida

    • The University of Tokyo
    • the University of Tokyo
  • Yusuke Nakazawa

    • the University of Tokyo
  • Shinichi Nishihaya

    • the University of Tokyo
  • Kazuto Akiba

    • the University of Tokyo
  • Markus Kriener

    • RIKEN
  • Yusuke Kozuka

    • the University of Tokyo
  • Atsushi Miyake

    • the University of Tokyo
  • Yasujiro Taguchi

    • RIKEN
  • Masashi Tokunaga

    • the University of Tokyo
  • Naoto Nagaosa

    • the University of Tokyo, RIKEN
  • Yoshinori Tokura

    • the University of Tokyo, RIKEN
  • Masashi Kawasaki

    • the University of Tokyo, RIKEN