Growth parameter control toward mobility enchancement in doped BaSnO$_{3}$ thin films

Doped BaSnO$_{3}$ is known to exhibit high electron mobility at room temperature, showing great prospects as an transparent conducting oxide.~However, when grown epitaxially on perovskite substrates, thin films exhibit reduced mobilities compared with bulk single crystals due to scattering from the formation of dislocations at the interface of the thin film and substrate. In this emerging field, correlating synthesis growth regimes, structure, and stoichiometry with transport properties is critical for developing next level oxide electronic devices. Here, we will discuss our results linking growth conditions and transport properties of La-doped BaSnO$_{3}$ (BLSO) to enhance mobility. In addition to varying standard growth parameters, we deposited BLSO on a hygroscopic pseudo-perovskite buffer layer$^{1}$. The pseudo-perovskite buffer acts as a sacrificial layer that can be selectively etched to produce conductive free-standing BLSO membranes, free of the underlying substrate. This allows us to minimize film dislocation density and examine BLSO transport properties in the limit of no substrate. $^{1}$D. Lu et al., Nat. Mater$. $DOI:10.1038/nmat4749.