Logarithmic voltage bias dependence in ferromagnetic two-dimensional topological insulators
ORAL
Abstract
The quantum anomalous Hall effect has recently been demonstrated in thin films of $(\text{BiSb})_2\text{Te}_3$ with Vanadium doping. We report the first e-beam lithographically defined devices from this ferromagnetic two-dimensional topological insulator. Transport measurements show that, when the bulk is gated into a conducting state, longitudinal resistance and Hall resistance have logarithmic dependence on source-drain voltage bias and temperature. As this system may be a suitable platform for Majorana fermions, it is critical to understand the logarithmic dependence as it occurs around zero bias. We present a model to explain the observed logarithmic dependence near zero bias and address other sources of logarithmic dependence that are not present in the device.
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Authors
J. Ward
Department of Physics, Harvard University, Cambridge, MA, 02138
Department of Physics, Harvard University, Cambridge, MA 02138
K. Shain
Department of Physics, Harvard University, Cambridge, MA, 02138
Department of Physics, Harvard University, Cambridge, MA 02138
D. Nandi
Harvard University
Department of Physics, Harvard University, Cambridge, MA, 02138
Department of Physics, Harvard University, Cambridge, MA 02138
G.H. Lee
Harvard University, Cambridge, USA
Department of Physics, Harvard University, Cambridge, MA, 02138
Department of Physics, Harvard University, Cambridge, MA 02138
Cui-Zu Chang
Massachusetts Institute of Technology, Pennsylvania State University
The Penn State University & Massachusetts Institute of Technology
MIT&The Penn State University
Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, MA, 02139
Francis Bitter Magnet Lab, Massachussetts Institute of Technology, Cambridge, MA 02139
K. Huang
Department of Physics, Harvard University, Cambridge, MA, 02138
Department of Physics, Harvard University, Cambridge, MA 02138
J.S. Moodera
Dept. of Physics, Francis Bitter Magnet Lab, Plasma Science and Fusion Center, MIT
Massachusetts Institute of Technology
Dept. of Physics and Francis Bitter Magnet Lab, MIT
MIT
Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, MA, 02139
Francis Bitter Magnet Lab, Massachussetts Institute of Technology, Cambridge, MA 02139
P. Kim
Harvard University
Department of Physics, Harvard University
Department of Physics, Harvard University, Cambridge, MA 02138, US
Harvard University, department of Physics
Harvard University, Department of Physics
Department of Physics, Harvard University, Cambridge, MA, 02138
Department of Physics, Harvard University, Cambridge, MA 02138
A. Yacoby
Harvard University
Harvard University, Cambridge USA.
Department of Physics, Harvard University
Department of Physics, Harvard University, Cambridge, MA, 02138
Department of Physics, Harvard University, Cambridge, MA 02138