Silicon superconducting quantum interference device

ORAL

Abstract

We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser Doping (GILD) technique. The SQUID device is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.

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Authors

  • Anaïs FRANCHETEAU

    • CEA Grenoble

  • Jean-Eudes DUVAUCHELLE

    • CEA Grenoble

  • Christophe MARCENAT

    • CEA Grenoble

  • Francesca Chiodi

    • IEF Orsay

  • Dominique Débarre

    • IEF Orsay

  • Klaus Hasselbach

    • Institut Néel CNRS Grenoble

  • J.R. Kirtley

    • Stanford University California

  • François Lefloch

    • CEA Grenoble