Pauli spin blockade in CMOS silicon double dots probed by dual gate reflectometry

Silicon quantum dots are attractive candidates for the development of scalable spin-based qubits. The Pauli spin blockade effect in double quantum dots can provide an efficient, temperature-independent mechanism for qubit readout. Here we report the observation of Pauli blockade in silicon double quantum dots defined in double-gate nanowire transistors fabricated using silicon-on-insulator CMOS technology. Each of the two gates is connected to an LC resonator to perform radio-frequency reflectometry. This powerful technique allows high-sensitivity detection of charge transitions in the double quantum dot down to the few-electron regime. We find evidence of Pauli spin blockade and study the magnetic-field dependence of the underlying singlet-triplet states.