Electronic Structure near the Interface of Complex Oxide Heterostructure SmTiO$_{3}$/SrTiO$_{3}$

ORAL

Abstract

Quantum wells created from oxide heterostructures induce quantum confinement systems at the heterostructure interface, which show unique properties, such as strong electron correlation, two-dimensional superconductivity, high carrier densities and mobility, and/or magnetism. The rare earth titanate, SmTiO$_{3}$, and the transition metal oxide, SrTiO$_{3}$, create such confined electron systems at their interface, which has a controllable quantum well length by changing the number of SrO layers in SrTiO$_{3}$. By Varying the number of SrO layers, we will present the layer-dependent electronic structure of the SmTiO$_{3}$/SrTiO$_{3}$ interface system from angle-resolved photoemission spectroscopy (ARPES) measurements and discuss these results in terms of strong correlations.

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Authors

  • Ryo Mori

    • University of California, Berkeley and Lawrence Berkeley National Laboratory

  • Brandon Isaac

    • University of California, Santa Barbara

  • Patrick Marshall

    • University of California, Santa Barbara

  • Jonathan Denlinger

    • Lawrence Berkeley National Laboratory

  • Susanne Stemmer

    • University of California, Santa Barbara

  • Alessandra Lanzara

    • University of California, Berkeley and Lawrence Berkeley National Laboratory