Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots

Controlling the size of semiconductor nanostructures allows manipulation of the optical and electrical properties of band carriers. We show that laterally-confined monolayer MoS$_2$ quantum dots can be created through top-down nanopatterning of an atomically-thin two-dimensional semiconductor. Semiconductor-compatible nanofabrication processing allows for these low-dimensional materials to be integrated into complex systems that harness their controllable optical properties. Size-dependent exciton energy shifts and linewidths are observed, demonstrating the influence of quantum confinement. The patterned dots exhibit the same valley polarization characteristics as in a continuous MoS$_2$ sheet, suggesting that monolayer semiconductor quantum dots could have potential for advancing quantum information applications.