Vertically Stacked Graphene/Transition-Metal-Dichalcogenides/Graphene Heterojunction Devices for High Performance Photodetectors

Photodetectors based on vertically stacked graphene heterojunctions have advantages of short transit length for photo-generated carriers and large sensing area, thus implying fast response time and high responsivity. Previously, vertically stacked Graphene (Gr)/Transition-Metal-Dichalcogenide (TMDC)/Gr junctions were introduced for optoelectronic devices, showing high current on and off ratio as well as photoresponsivity. But for high performance photodetectors, both thorough and comparative study in terms of the figures of merit such as photoresponse time and photoresponsivity depending on different TMDC materials is crucial. Here, we report fast response time (28 us) and high responsivity (20 A/W) from Gr/WSe2 and MoS2/Gr, respectively. At the same time, those devices operate as p- and n-type barrier-variable transistors, respectively, being a potential building block for optoelectronic system on a chip.