Dopants and Defects in Semiconductors: Silicon and Germanium
ORAL · V7 ·
Presentations
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Scanning Tunneling Spectroscopy Study of Single Layer Step Edges on Si (100) Surfaces.
ORAL
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Authors
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Xiqiao Wang
- University of Maryland-College Park
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Pradeep Namboodiri
- National Institute of Standard and Technology
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Kai Li
- National Institute of Standard and Technology
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Xiao Deng
- National Institute of Standard and Technology
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Richard Silver
- National Institute of Standard and Technology
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Structural and electrical properties of silicon hyperdoped with gold
ORAL
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Authors
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Jay Mathews
- University of Dayton
- Department of Physics, University of Dayton
- Electro-Optics Program, University of Dayton, Dayton, OH and Department of Physics, University of Dayton, Dayton, OH
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Yining Liu
- Electro-Optics Program, University of Dayton
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Girish Malladi
- SUNY Polytechnic Institute
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Harry Efstathiadis
- SUNY Polytechnic Institute
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Jeffrey Warrender
- US Army ARDEC-Benet Laboratories
- US Army ARDEC-Benét Labs
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Intersubband scattering in modulation-doped Si two-dimensional electron gases
ORAL
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Authors
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Yi-Hsin Su
- Graduate Institute of Electronic Engineering, National Taiwan University, Taipei, Taiwan
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Jiun-Yun Li
- Graduate Institute of Electronic Engineering, National Taiwan University, Taipei, Taiwan
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Leonid Rokhinson
- Department of Physics, Purdue University, West Lafayette, IN, USA
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James Sturm
- Department of Electrical Engineering, Princeton University, Princeton, NJ, USA
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Extending silicon's infrared response through laser hyperdoping with gold
ORAL
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Authors
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Jeffrey Warrender
- US Army ARDEC-Benet Laboratories
- US Army ARDEC-Benét Labs
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Quentin Hudspeth
- US Army ARDEC-Benet Laboratories
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Harry Efstathiadis
- SUNY-Polytechnic Institute
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Elif Ertekin
- University of Illinois at Urbana-Champaign
- Univ of Illinois - Urbana
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Jay Mathews
- University of Dayton
- Department of Physics, University of Dayton
- Electro-Optics Program, University of Dayton, Dayton, OH and Department of Physics, University of Dayton, Dayton, OH
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Theoretical interpretation of donor wavefunctions STM images in silicon
ORAL
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Authors
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B. Koiller
- Instituto de F{\'\i}sica, Universidade Federal do Rio de Janeiro, Brazil
- UFRJ
- IF, UFRJ, Brazil
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Andre Saraiva
- Instituto de F{\'\i}sica, Universidade Federal do Rio de Janeiro, Brazil
- UFRJ
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Rodrigo B. Capaz
- Instituto de F{\'\i}sica, Universidade Federal do Rio de Janeiro, Brazil
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M.J, Calder\'on
- ICMM-CSIC, Madrid, Spain
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Joe Salfi
- Centre for Quantum Computation and Communication Technology, Sydney, Australia
- CQCCT, University of New South Wales, Australia
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B. Voisin
- Centre for Quantum Computation and Communication Technology, Sydney, Australia
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J. Bocquel
- Centre for Quantum Computation and Communication Technology, Sydney, Australia
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Sven Rogge
- Centre for Quantum Computation and Communication Technology, Sydney, Australia
- CQCCT, University of New South Wales, Australia
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Interstitial Functionalization in elemental Si
ORAL
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Authors
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Boris Kiefer
- New Mexico State University
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Edwin Fohtung
- New Mexico State University and Los Alamos National Laboratory
- New Mexico State University
- New Mexico State University, Los Alamos National Laboratory
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Isolation of dangling bond states on Si(100) surfaces for quantum information applications
ORAL
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Authors
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Peter Scherpelz
- Institute for Molecular Engineering, University of Chicago
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Giulia Galli
- Institute for Molecular Engineering, University of Chicago
- University of Chicago
- Institute for Molecular Engineering, the University of Chicago
- Univ of Chicago
- Institute for Molecular Engineering University of Chicago
- Institute for Molecular Engineering-The University of Chicago, and Argonne National Laboratory
- Institute for Molecular Engineering, The University of Chicago
- Institute for Molecular Engineering, University of Chicago & Argonne National Laboratory
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Hybrid functional calculations of Copper impurities and related complexes in Silicon
ORAL
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Authors
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Abhishek Sharan
- Department of Physics and Astronomy, University of Delaware, Newark DE 19716
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Zhigang Gui
- Univ of Delaware
- Materials Science and Engineering, University of Delaware, Newark DE 19716
- University of Delaware, Department of Materials Science and Engineering
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Anderson Janotti
- University of Delaware
- Univ of Delaware
- Univ of California - Santa Barbara
- University of Delaware, Newark
- Materials Science and Engineering, University of Delaware, Newark DE 19716
- University of Delaware, Department of Materials Science and Engineering
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Impurity distribution in high purity germanium crystal and its impact on the detector performance.
ORAL
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Authors
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Guojian Wang
- Department of Physics, University of South Dakota
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Mark Amman
- Ernest Orlando Lawrence Berkeley National Laboratory, University of California
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Hao Mei
- Department of Physics, University of South Dakota
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Dongming Mei
- Department of Physics, University of South Dakota
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Klaus Irmscher
- Leibniz Institute for Crystal Growth
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Yutong Guan
- Department of Physics, University of South Dakota
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Gang Yang
- Department of Physics, University of South Dakota
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Interface effects on acceptor silicon qubits
ORAL
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Authors
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Jose Carlos Abadillo-Uriel
- CSIC - Madrid
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Maria Jose Calderon
- CSIC - Madrid
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Quantum states of interacting point defects in silicon
ORAL
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Authors
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Steven Schofield
- University College London
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Holly Hedgeland
- University College London
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Manuel Siegl
- University College London
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David Bowler
- University College London
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Quantum Point Contacts and Valley Filters on a 6-fold Degenerate Hydrogen-terminated Si(111) Surface
ORAL
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Authors
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Luke D. Robertson
- U. of Maryland
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Binhui Hu
- NIST Gaithersburg
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B. E. Kane
- U. of Maryland
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Electron spin resonance and relaxation of defects and donors in Silicon Nanowires
ORAL
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Authors
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Marco Fanciulli
- University of Milano Bicocca, Department of Materials Science
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Matteo Belli
- Laboratorio MDM, IMM-CNR
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Stefano Paleari
- University of Milano Bicocca, Department of Materials Science
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Antonio Pizio
- University of Milano Bicocca, Department of Materials Science
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