Gate sensing coherent charge oscillations in a silicon field-effect transistor.

We report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St\"{u}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, T$_{\mathrm{2}}=$ 100 ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing complementary metal-oxide-semiconductor technology.