Monolayer MoS$_{\mathrm{2}}$ on HOPG Studied by Scanning Tunneling Microscopy / Spectroscopy

Chemical Vapor Deposition (CVD) is a promising way to prepare 2D material such as graphene and MoS$_{\mathrm{2}}$ for $\mu $m-scale. In this report, we deposit monolayer MoS$_{\mathrm{2}}$ by CVD method on HOPG to create the heterojunction. We observe that, the alignment of triangle MoS$_{\mathrm{2}}$ islands shows the tendency that they have some preferred directions from AFM morphology. From STM atomic resolution images, the moir\'{e} superstructures analysis could summarize that the MoS$_{\mathrm{2}}$ lattice tends to have a small angle with graphite's lattice. On the other hand, we also take the tunneling spectra from the different moir\'{e} domains and the moir\'{e} hills, moir\'{e} volleys of the single moir\'{e} domain. The results reveal the extraordinary states, which appear in the band gap range of MoS$_{\mathrm{2}}$. We consider these states are the consequence of hybridized of two layers and be detected from the interlayer space.