Scanning tunneling spectroscopy of tungsten disulfide

Atomically thin layers of tungsten disulfide possess interesting optoelectronic properties characterized by strong photoluminescence. Here we perform scanning tunneling microscopy and spectroscopy measurements of 2H WS$_{2}$ on silicon oxide substrates to understand how electronic properties are affected by defects and substrate-induced disorder. Specifically, the electronic property of tungsten disulfide is probed as a function of gate-induced carrier density.