Band parameters of 2D semiconductor heterostructures determined by micro-ARPES

Heterostructures made by stacking monolayers of different 2D materials can have unique properties, such as hosting long-lived polarized interlayer excitons. Understanding these depends on knowledge of the band parameters of both the separate monolayers and the hetero-bilayer. Interlayer hybridization can also produce distinct electronic structure dependent on the relative monolayer crystal orientation. The most powerful technique for determining such properties is angle-resolved photoemission (ARPES), which can now be applied to micron-scale samples at the Spectromicroscopy Elettra Trieste beamline. Using this new facility, combined with careful sample design, we have studied heterostructures of WSe2, MoSe2, WS2 and graphene.~ We determined band offsets, effective masses, and spin-orbit splittings with an energy resolution \textless 50 meV. Interestingly, the bands near the gamma-point in hetero-bilayers oriented near zero degrees are not a superposition of those in the isolated monolayers, but exhibit an additional higher band. However, the valence band edge remains at the K-point, which together with the band offsets is consistent with measurements of strong luminescence from interlayer excitons in MoSe2/WSe2.