Weak Antilocalization Effect in Metallic Bi$_{2}$Te$_{3}$ Topological Insulator

POSTER

Abstract

We have observed weak antilocalization effect in the metallic Bi$_{2}$Te$_{3}$ single crystals having different bulk carrier densities. The angle dependence of weak antilocalization with respect to the direction of the magnetic field showed the surface states dominating in the samples having lower carrier concentration. The surface states dominance in weak antilocalization does not depend on the nature of the bulk charge carriers (p or n-type). Using the Hikami-Larkin-Nagaoka (HLN) formula, we have found the number of conduction channels is smaller in the samples having lower carrier concentration.

Authors

  • K. Shrestha

    • TcSUH and Department of Physics, University of Houston, 3201 Cullen Blvd., Houston, Texas 77204, USA
    • Idaho National laboratory

  • M. Chou

    • Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Taiwan

  • David Graf

    • National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA
    • NHMFL-FSU
    • National High Magnetic Field Laboratory, Florida State University
    • National High Magnetic Field Laboratory

  • H. D. Yang

    • Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan
    • Department of Physics, National Sun Yat-Sen University, Taiwan

  • B. Lorenz

    • TcSUH and Department of Physics, University of Houston, 3201 Cullen Blvd., Houston, Texas 77204, USA

  • Paul C. W. Chu

    • TcSUH and Department of Physics, University of Houston, 3201 Cullen Blvd., Houston, Texas 77204, USA