\textbf{Integration of Multifunctional Epitaxial Oxide Heterostructures with Si(001)}

Multifunctional heterostructures exhibit a wide range of functional properties, including colossal magneto-resistance, multiferroic behavior, and spin, charge, and orbital ordering. However, putting this functionality to work remains a challenge. To date, most of the previous works reported in the literature have dealt with heterostructures deposited on closely lattice matched (using lattice matching epitaxy-LME) insulating substrates such as DyScO$_{\mathrm{3}}$, NdGaO$_{\mathrm{3}}$, MgO, SrTiO$_{\mathrm{3}}$ and MBE-grown STO buffered Si(100). This presentation discusses the major advances in the integration of multifunctional oxide materials onto ubiquitous silicon semiconductor platform reported$^{\mathrm{1-6}}$ in the recent past by the presenting authors using a novel thin film growth approach, called `domain matching epitaxy'(DME), which minimizes the strain and nucleation of unwanted defects. The DME paradigm has been used across the large misfit scale (7-25{\%}).~Of particular interest, thin film heterostructures including two-phase multiferroics such as BiFeO$_{\mathrm{3}}$(BFO)/La$_{\mathrm{0.7}}$Sr$_{\mathrm{0.3}}$MnO$_{\mathrm{3}}$ (LSMO), BaTiO$_{\mathrm{3}}$(BTO)/LSMO, and LSMO/SrRuO$_{\mathrm{3}}$(SRO). These significant materials advancements may herald a flurry of exciting new advances in CMOS-compatible multifunctional devices.$^{\mathrm{\mathbf{1}}}$\underline {\textbf{S. S. Rao}}\textbf{, }\textit{et al.}\textbf{, }Nano Letters \textbf{13}, 5814 (2013); J. Appl. Phys., \textbf{116}, 094103 (2014); J. Appl. Phys., \textbf{116}, 224104 (2014); J. Appl. Phys., \textbf{117}, 17D908 (2015); $^{\mathrm{5}}$J. Appl. Phys., \textbf{117}, 17B711 (2015); $^{\mathrm{\mathbf{6}}}$Current Opinion in Solid State and Materials Science. \textbf{19,} 301-304 (2015).