Control of Rewriteable Doping Patterns in Graphene/Boron Nitride Heterostructures
POSTER
Abstract
Spatial control of charge doping in 2D materials is a prerequisite for designing future electronic devices and understanding novel physics. Electrostatic gating and chemical doping are two of the most common methods to achieve this. However, these approaches suffer from complicated fabrication processes that introduce impurities, change material properties irreversibly, and lack flexibility. Here we introduce a new method for patterning rewriteable doping profiles using an STM tip by way of local tip-voltage-induced ionization of defects in a BN substrate. We characterize these spatial doping patterns through local probe and transport techniques. This technique enables many novel device designs for 2D materials, including atomically thin p-n junctions and rewriteable memory devices.