Electrochemical manipulation of two-dimensional materials

ORAL

Abstract

The electronic properties of a variety of two-dimensional (2D) materials can be modulated by electrochemical modifications on mesoscopic scale. Here we demonstrate a proof-of-concept ionic field-effect transistor (iFET), which is based on reversible modifications of the electronic properties of a wide range of layered materials (e.g. 1T-TaS$_2$ and 2H-TaS$_2$) through gate-controlled electrochemical reactions with mobile ions in the electrolyte. By fine-tuning the electrochemical reactions, we can switch between Mott phase, superconducting phase, metallic phase and insulating phase in a single 1T-TaS$_2$ iFET device. Such technique opens up new possibilities in searching for the novel state of matter in 2D materials.

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Authors

  • Yijun Yu

    • Fudan University

  • Fangyuan Yang

    • Fudan University

  • Xiu Fang Lu

    • University of Science and Technology of China

  • Ya Jun Yan

    • University of Science and Technology of China

  • Yong-Heum Cho

    • Rutgers University

  • Liguo Ma

    • Fudan University

  • Xiaohai Niu

    • Fudan University

  • Sejoong Kim

    • Korea Institute for Advanced Study

  • Young-Woo Son

    • Korea Institute for Advanced Study

  • Donglai Feng

    • Fudan University

  • Shiyan Li

    • Fudan University

  • Sang-Wook Cheong

    • Rutgers University

  • Xian Hui Chen

    • University of Science and Technology of China

  • Yuanbo Zhang

    • Fudan University