Electronic Transport in Ultra-Thin 1T'-WTe$_{\mathrm{2}}$

We report low-temperature electronic transport measurements of 1T'-WTe$_{\mathrm{2}}$ in the few-layer limit. Thin layers of WTe$_{\mathrm{2}}$ are obtained by the mechanical exfoliation technique and are subsequently encapsulated between thin hexagonal Boron Nitride crystals via a dry crystal transfer technique. These devices are fabricated entirely inside an inert-atmosphere glove box to avoid degradation. We report on the temperature, magnetic field, and electrostatic gate voltage dependence of these devices for several different thicknesses.