Electric Field-induced Resistance Switching in VO$_{2}$ Channels using Hybrid Gate Dielectric of High-$k$ Ta$_{2}$O$_{5}$/Organic material Parylene-C.

Electrostatic approach utilizing field-effect transistor (FET) with correlated electron materials provides an avenue to realize the novel devices (Mott-transistor) and to clarify condensed matter physics. In this study, we have prepared Mott-transistors using vanadium dioxide (VO$_{2})$ channels and employed hybrid gate dielectric consisted of high-$k$ material Ta$_{2}$O$_{5\, }$and organic polymer parylene-C to trigger carrier transport modulation in VO$_{2}$. Obvious resistance modulations were observed in insulating regime through time-dependent resistance measurement at varied square-shaped gate bias ($V_{G})$. Contrasting to the hysteretic response in electric double layer transistor (EDLT), an abrupt resistance switching in less than of 2-second-interval enables us to attribute such immediate modulation to pure electrostatic effect. Moreover, the maximum of resistance change was identified to appear around phase transition temperature (T$_{MI})$, which confirmed the disordered heterogeneous regime at T$_{MI}$. Taking advantage of systematic modulation using VO$_{2}$-based devices, we demonstrated the pronounced shifts of T$_{MI}$ by gate bias. Another fascinating behavior on asymmetric drop in T$_{MI}$ by hole-electron carrier doping was observed.