Electronic Transport Properties of New 2-D Materials GeH and NaSn$_{2}$As$_{2}$

2-D materials potentially have superior thermoelectric properties compared to traditional 3-D materials due to their layered structure. Here we present electrical and thermoelectric transport properties of 2 types of 2-D materials, GeH and NaSn$_{2}$As$_{2}$. GeH is a graphane analog which is prepared using chemical exfoliation of CaGe$_{2}$ crystals. Intrinsic GeH is proven to be a highly resistive material at room temperature. Resistance and Seebeck coefficient of Ga doped GeH are measured in a cryostat with a gating voltage varying from -100V to 100V. NaSn$_{2}$As$_{2}$ is another 2-D system, with Na atom embedded between nearly-2D Sn-As layers. Unlike GeH, NaSn$_{2}$As$_{2}$ is a metal based of Hall measurements, with p-type behavior, and with van der Pauw resistances on the order of ~5m$\Omega$/square. Thermoelectric transport properties of NaSn$_{2}$As$_{2}$ will be reported.