Transport studies of quantum dots sensitized single Mn-ZnO nanowire field effect transistors

We present opto-electrical transport properties of Mn-CdSe quantum dots (QDs) sensitized single Mn-ZnO nanowire (NW) field effect transistors (FET). The ZnO NWs with 2 atomic {\%} of Mn doping are grown by chemical vapor deposition. The NWs are ferromagnetic at low temperature. The as grown nanowires are transferred to clean SiO2/Si substrate and single nanowire field effect transistors (FET) are fabricated by standard e-beam lithography. Mobility and carrier concentration of Mn-ZnO NWs are estimated from FET device measurement which shows NWs are n-type semiconductors. Pulse laser deposition of Mn-CdSe QDs on the single NW FET significantly increases carrier concentration of the QD-NW system in dark where the QD monolayer conduction is negligibly small. The photoconductivity study of QD sensitized NW FET enlightens the conduction spectrum of QD-NW system and QD to NW carrier transfer mechanism.