Electron transport in doped GaAs nanowires contacted by evaporated metal films

ORAL

Abstract

We present electron transport measurements in doped GaAs nanowire samples contacted by metal interfaces as function of temperature. We show that the contact resistance is strongly dependent on T ($5K

*The work is supported by NSF grant DMR-1206784 and University of Cincinnati

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Authors

  • Zhuting Sun

    • Univ of Cincinnati

  • Andrei Kogan

    • Univ of Cincinnati

  • Timothy Burgess

    • Australian National University

  • Chennupati Jagadish

    • Australian National University