Quantum Hall Effect in Black Phosphorus Two-dimensional Electron System

ORAL

Abstract

The recent advent of black phosphorus has greatly enriched the material base of two-dimensional electron systems (2DES). In this work, we reached a milestone in black phosphorus research – the observation of integer quantum Hall (QH) effect in high quality black phosphorus 2DES. We achieved high carrier mobility by embedding the black phosphorus 2DES in a van der Waals heterostructure close to a graphite back gate; the graphite gate screens the impurity potential in the 2DES, and brings the Hall mobility up to 6000 cm2/Vs. The exceptional mobility enabled us, for the first time, to observe QH effect, and to gain important information on the energetics of the spin-split Landau levels in black phosphorus. Our results set the stage for further study on quantum transport and device application in the ultrahigh mobility regime.

Authors

  • Likai Li

    • Fudan University
  • Fangyuan Yang

    • Fudan University
  • Guo Jun Ye

    • University of Science and Technology of China
  • Zuocheng Zhang

    • Tsinghua University
  • Zengwei Zhu

    • Huazhong University of Science and Technology
  • Wenkai Lou

    • Chinese Academy of Sciences
  • Xiaoying Zhou

    • Chinese Academy of Sciences
  • Liang Li

    • Huazhong University of Science and Technology
  • Kenji Watanabe

    • National Institute for Materials Science
  • Takashi Taniguchi

    • National Institute for Materials Science
  • Kai Chang

    • Chinese Academy of Sciences
  • Yayu Wang

    • Tsinghua University
  • Xian Hui Chen

    • University of Science and Technology of China
  • Yuanbo Zhang

    • Fudan University