Dopants and Defects in Semiconductors: Nitrides
FOCUS · K7 ·
Presentations
-
Point and Extended Defects in GaN-based Materials
COFFEE_KLATCH · Invited
–
Authors
-
James S. Speck
- UCSB Materials Department
- Materials Department, University of California, Santa Barbara
-
-
Impact of defects on efficiency of nitride devices
COFFEE_KLATCH · Invited
–
Authors
-
Chris G. Van de Walle
- University of California, Santa Barbara
- Univ of California - Santa Barbara
- Materials Department, University of California, Santa Barbara
- Materials Department, UC Santa Barbara
- UCSB
- University of California Santa Barbara
-
-
Saturation Behavior of Eu ion emission in GaN
ORAL
–
Authors
-
Natalie Hernandez
- Lehigh University
-
Brandon Mitchell
- University of Mount Union
- Department of Physics and Astronomy, University of Mt. Union
-
Yasufumi Fujiwara
- Osaka University
-
Volkmar Dierolf
- Lehigh University
- Department of Physics, Lehigh University
-
-
Hydrogen-carbon complexes and the blue luminescence band in GaN.
ORAL
–
Authors
-
Denis Demchenko
- None
- Virginia Commonwealth Univ
-
Ibrahima Diallo
- Virginia Commonwealth University
-
Michael Reshchikov
- Virginia Commonwealth University
-
-
Impact of point defects on III-nitride tunnel devices.
ORAL
–
Authors
-
Darshana Wickramaratne
- Materials Department, UC Santa Barbara
-
John L. Lyons
- Center for Functional Nanomaterials, Brookhaven National Laboratory
- University of California Santa Barbara
-
Chris G. Van de Walle
- University of California, Santa Barbara
- Univ of California - Santa Barbara
- Materials Department, University of California, Santa Barbara
- Materials Department, UC Santa Barbara
- UCSB
- University of California Santa Barbara
-
-
Density Functional Theory Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors
ORAL
–
Authors
-
N. A. Modine
- Sandia National Laboratories
-
A. F. Wright
- Sandia National Laboratories
-
S. R. Lee
- Sandia National Laboratories
-
-
First-principles identification of optically active Er$^{3+}$ centers in GaN
ORAL
–
Authors
-
Khang Hoang
- North Dakota State University
-
-
Native defects in GaN: a hybrid functional study
ORAL
–
Authors
-
Ibrahima Castillo Diallo
- None
-
Denis Demchenko
- None
- Virginia Commonwealth Univ
-
-
Native point defects and doping in ZnGeN$_2$
ORAL
–
Authors
-
Dmitry Skachkov
- Case Western Reserve University
-
Walter Lambrecht
- Case Western Reserve University
-
-
Fluorescent Defects in Hexagonal Boron Nitride
ORAL
–
Authors
-
Annemarie L. Exarhos
- University of Pennsylvania
-
Kameron Oser
- University of Pennsylvania
-
David A. Hopper
- University of Pennsylvania
-
Richard R. Grote
- University of Pennsylvania
-
Lee C. Bassett
- University of Pennsylvania
-
-
Unique stability of neutral interstitial hydrogen in cubic BN and diamond
ORAL
–
Authors
-
John L. Lyons
- Center for Functional Nanomaterials, Brookhaven National Laboratory
- Brookhaven National Laboratory
-
Chris G. Van de Walle
- University of California, Santa Barbara
- Univ of California - Santa Barbara
- Materials Department, University of California, Santa Barbara
- Materials Department, UC Santa Barbara
- UCSB
- University of California Santa Barbara
-