Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure

Spin metal-oxide semiconductor field-effect transistors (spin MOSFETs) [1] are one of the most promising devices for the post-scaling era. In previous studies on spin MOSFETs[2,3], the drain-source current was controlled by the gate-source voltage and magnetization configuration of the source and drain; however, the magnetoresistance (MR) ratios (0.1{\%} [2] and 0.005{\%} [3] ) were too small to be put into practical applications, and thus spin MOSFET with a high MR ratio is strongly required. Here, we study a GaMnAs-based vertical spin-MOSFET structure. We successfully modulate the drain-source current $I_{\mathrm{DS}}$ by \textasciitilde 0.5 (--0.5) {\%} with a gate-source voltage of --10.8 ($+$10.8) V and also modulate $I_{\mathrm{DS}}$ by up to 60 {\%} with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The MR ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs[2,3][4] [1] S. Sugahara and M. Tanaka, APL 84, 2307 (2004). [2] R. Nakane \textit{et al}., JJAP 49, 113001 (2010). [3] T. Sasaki \textit{et al}., Phys. Rev. Appl. 2, 034005 (2014). [4] T. Kanaki \textit{et al}., submitted; arXiv:1510.07497.