Infrared Kerr measurements on ferromagnetic silicon and silicon carbide

ORAL

Abstract

We measure the infrared (100-1000 meV) Kerr angle in ferromagnetic silicon and silicon carbide. The samples were either neutron irradiated or aluminum doped to induce ferromagnetic behavior. The samples are studied in the 10-300K temperature range at magnetic fields up to 7T. We also explore the dependence of the magneto-optical signal on samples with different irradiation exposure levels. This study provides new information on the optical, magnetic, and electronic properties of these materials. Work supported by NSF-DMR1410599 and the Helmholtz Postdoctoral Program PD-146.

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Authors

  • Jungryeol Seo

    • State Univ of NY - Buffalo
    • Department of Physics, University at Buffalo, Buffalo, NY, USA

  • Alok Mukherjee

    • Department of Physics, University at Buffalo, Buffalo, NY, USA

  • Mumtaz Murat Arik

    • Department of Physics, University at Buffalo, Buffalo, NY, USA

  • John Cerne

    • Department of Physics, University at Buffalo, Buffalo, NY, USA

  • Yu Liu

    • Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany

  • Shengqiang Zhou

    • Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany

  • Roman Böttger

    • Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany

  • Bo Song

    • Harbin Institute of Technology, Nangang, Harbin, Heilongjiang, China

  • Gang Wang

    • Institute of physics, Chinese Academy of Sciences, Haidian, Beijing, China