Quantum well states in Rashba semiconductor BiTeI

ORAL

Abstract

BiTeI displays large Rashba-type spin splitting in both valence and conduction bands. In this work, we use scanning tunneling microscopy to reveal the bipolar nature of BiTeI, confirming the previously observed p-n junction electronic structure. We also discover two-dimensional quantum well states both below and above the semiconducting gap on the Te-terminated surface. This work sheds light on the origin of the giant Rashba splitting in the system.~

*This effort is funded by the NSF grant DMR-1410480.

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Authors

  • Yang He

    • Harvard University

  • Zhihuai Zhu

    • Harvard University

  • Mohammad Hamidian

    • Harvard University; Cornell University

  • Pengcheng Chen

    • Harvard University; The University of British Columbia
    • Department of Physics, Harvard University; Department of Physics & Astronomy, University of British Columbia

  • Yau Chuen Yam

    • Harvard University; The University of British Columbia
    • Harvard Univeristy

  • Jennifer E. Hoffman

    • University of British Columbia
    • Harvard University; The University of British Columbia
    • Harvard Univeristy
    • University of British Columbia, Harvard University