Understanding Magnetic Proximity in Topological Insulators with Raman
ORAL
Abstract
The magnetic proximity effect in Topological Insulators has been extensively studied due to predictions of quantum anomalous Hall effect and numerous applications in spintronics. Nonetheless, the origin of the proximity effect remains unclear. To uncover the role of the lattice we have used Raman scattering to investigate the magnetic proximity effect of thin film ferromagnetic insulator EuS grown by MBE on the topological insulator Bi$_{2}$Se$_{3}$. Through these measurements we are able to probe the magnetic fluctuations in the EuS. We will discuss the results of our measurements and their implications for the role of strain in ferromagnetic/topological insulator heterostructures.
*We gratefully acknowledge support from the National Science Foundation (Grant No. DMR-1410846)
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