Development of spin-gapless semiconductivity and half metallicity in Ti$_{\mathrm{2}}$MnAl by substitutions for Al

ORAL

Abstract

In recent years, ever increasing interest in spin-based electronics has resulted in the search for a new class of materials that can provide a high degree of spin polarized electron transport. An ideal candidate would act like insulator for one spin channel and a conductor or semiconductor for the opposite spin channel (e.g., half metal (HM), spin-gapless semiconductor (SGS)). Here, we present the combined computational, theoretical, and experimental study of Ti$_{\mathrm{2}}$MnAl, a Heusler compound with potential application in the field of spintronics. We show that in the ground state this material is metallic, however it becomes a SGS when 50{\%} of Al is substituted with In (e.g., Ti$_{\mathrm{2}}$MnAl$_{\mathrm{0.5}}$In$_{\mathrm{0.5}})$, and a HM when 50{\%} of Al is substituted with Sn (e.g., Ti$_{\mathrm{2}}$MnAl$_{\mathrm{0.5}}$Sn$_{\mathrm{0.5}})$. Detailed study of the structural, electronic, and magnetic properties of these materials is presented.

*Financial support: DOE/BES (DE-FG02-04ER46152); NSF NNCI: 1542182; NRI; Academic and Scholarly Excellence Funds, Office of Academic Affairs, SDSU; UNI Faculty Summer Fellowship; Program for Outstanding Innovative Talents in Hohai University.

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Authors

  • P Lukashev

    • University of Northern Iowa
    • Department of Physics, University of Northern Iowa, Cedar Falls, IA 50614

  • Simeon Gilbert

    • South Dakota State University

  • Bradley Staten

    • University of Northern Iowa

  • Noah Hurley

    • University of Northern Iowa

  • Ryan Fuglsby

    • South Dakota State University

  • Parashu Kharel

    • South Dakota State University
    • Department of Physics, South Dakota State University, Brookings, SD 57007

  • Yung Huh

    • South Dakota State University

  • Shah Valloppilly

    • University of Nebraska, Lincoln

  • Wenyong Zhang

    • University of Nebraska, Lincoln

  • K. Yang

    • Hohai University

  • D. J. Sellmyer

    • Nebraska Center for Materials and Nanoscience and Department of Physics and Astronomy, University of Nebraska
    • University of Nebraska–Lincoln
    • Physics and Astronomy and NCMN, University of Nebraska
    • Univ of Nebraska-Lincoln
    • University of Nebraska Lincoln
    • University of Nebraska, Lincoln
    • Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588