2D Devices: Electronics and Optoelectronics
FOCUS · H16 ·
Presentations
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Nano-scale electronic and optoelectronic devices based on 2D crystals
COFFEE_KLATCH · Invited
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Authors
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Wenjuan Zhu
- University of Illinois
- University of Illinois at Urbana-Champaign
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Direct Visualization of Edge States and Electrical Inhomogeneity in MoS$_{2}$ Field Effect Transistors
ORAL
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Authors
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Di Wu
- University of Texas at Austin
- Univ of Texas, Austin
- Department of Physics, University of Texas at Austin
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Lan Luan
- Department of Physics, University of Texas at Austin
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Zhaodong Chu
- Department of Physics, University of Texas at Austin
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Xiaoyu Wu
- Univ of Texas, Austin
- Department of Physics, University of Texas at Austin
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Keji Lai
- University of Texas at Austin
- Univ of Texas, Austin
- Department of Physics, University of Texas at Austin
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Tunnelling in van der Waals heterostructures
ORAL
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Authors
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Artem Mishchenko
- School of Physics and Astronomy, University of Manchester
- School of Physics And Astronomy, The University of Manchester
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Kostya Novoselov
- School of Physics and Astronomy, University of Manchester
- School of Physics And Astronomy, The University of Manchester
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Andre Geim
- School of Physics And Astronomy, The University of Manchester
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Laurence Eaves
- The University of Nottingham
- University of Nottingham
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Vladimir Falko
- National Graphene Institute, University of Manchester, United Kingdom
- School of Physics And Astronomy, The University of Manchester
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Fabrication and characterization of graphene PN junctions
ORAL
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Authors
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Dennis Wang
- Columbia Univ
- Columbia University
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Xiaodong Zhou
- Department of Physics, Columbia University, New York, New York 10027, USA
- Columbia Univ
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Ali Dadgar
- Columbia Univ
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Pratik Agnihotri
- The State University of New York, Albany
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Ji Ung Lee
- The State University of New York, Albany
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Mark Reuter
- IBM T.J. Watson Research Center
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Frances Ross
- IBM T.J. Watson Research Center
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Abhay Pasupathy
- Columbia university
- Columbia Universtiy in the City of New York
- Columbia Univ
- Columbia University
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Graphene -- ferroelectric and MoS2 -- ferroelectric heterostructures for memory applications.
ORAL
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Authors
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Alexey Lipatov
- University of Nebraska - Lincoln
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Pankaj Sharma
- University of Nebraska - Lincoln
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Alexei Gruverman
- Univ of Nebraska - Lincoln
- University of Nebraska at Lincoln
- University of Nebraska - Lincoln
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Alexander Sinitskii
- University of Nebraska-Lincoln
- University of Nebraska - Lincoln
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Programmable Schottky Junctions Based on Ferroelectric Gated MoS$_{\mathrm{2}}$ Transistors.
ORAL
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Authors
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Zhiyong Xiao
- University of Nebraska–Lincoln
- Univ of Nebraska-Lincoln
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Jingfeng Song
- Univ of Nebraska-Lincoln
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Stephen Drcharme
- Univ of Nebraska-Lincoln
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Xia Hong
- Univ of Nebraska-Lincoln
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Control of Rewriteable Doping Patterns in Graphene/Boron Nitride Heterostructures
ORAL
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Authors
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Salman Kahn
- Univ of California - Berkeley
- University of California - Berkeley
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Jairo Velasco Jr.
- University of California - Berkeley
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Dillon Wong
- University of California - Berkeley
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Juwon Lee
- University of California - Berkeley
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Hsin Zon Tsai
- University of California - Berkeley
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Long Ju
- Cornell University
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Lili Jiang
- University of California - Berkeley
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Zhiwen Shi
- University of California - Berkeley
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Paul Ashby
- Molecular Foundry
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Takashi Taniguchi
- National Institute for Materials Science
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Kenji Watanabe
- National Institute for Materials Science
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Alex Zettl
- University of California - Berkeley
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Feng Wang
- University of California - Berkeley
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Michael Crommie
- University of California - Berkeley
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Spatially inhomogeneous barrier height in graphene/MoS2 Schottky junctions
ORAL
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Authors
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Dushyant Tomer
- Univ of Wisconsin, Milwaukee
- University of Wisconsin, Milwaukee
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Shivani Rajput
- University of Wisconsin, Milwaukee
- Univ of Wisconsin, Milwaukee
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Lian Li
- Univ of Wisconsin, Milwaukee
- University of Wisconsin, Milwaukee
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Phase change memory devices formed by using 2 dimensional layered Graphene-In2Se3 van der Waals heterostructure.
ORAL
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Authors
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Min Sup Choi
- Sungkyunkwan Univ
- Sungkyunkwan Univ., SKKU Advanced Institute of Nano-Technology
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Chenxi Yang
- Sungkyunkwan Univ., SKKU Advanced Institute of Nano-Technology
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Chang Ho Ra
- Sungkyunkwan Univ., SKKU Advanced Institute of Nano-Technology
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Won Jong Yoo
- Samsung-SKKU Graphene Center, SKKU Advanced Institute of Nano-Technology, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Korea
- Sungkyunkwan university Advanced Institute of Nano-Technology (SAINT)
- Sungkyunkwan Univ
- Sungkyunkwan Univ. (SKKU)
- Sungkyunkwan Univ., SKKU Advanced Institute of Nano-Technology
- SKKU Advanced Institute of Nano Technology
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Optoelectronic devices based on MoTe$_{\mathrm{2}}$ p-n junction.
ORAL
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Authors
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Ya-Qing Bie
- Condensed Matter Physics, MIT
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Mikkel Heuck
- EECS, MIT
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Marco Furchi
- Condensed Matter Physics, MIT
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Gabriele Grosso
- EECS, MIT
- Massachusetts Institute of Technology
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Jiabao Zheng
- Columbia University
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Yuan Cao
- Massachusetts Inst of Tech-MIT
- Condensed Matter Physics&EECS, MIT
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Efren Navarro-Moratalla
- Condensed Matter Physics, MIT
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Dirk Englund
- Massachusetts Institute of Technology
- EECS, MIT
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Pablo Jarillo-Herrero
- Massachusetts Inst of Tech-MIT
- Condensed Matter Physics, MIT
- MIT
- Massachusetts Institute of Technology
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\textbf{Polarization and resistive switching behavior of ferroelectric tunnel junctions with }\textbf{transition metal }\textbf{dichalcogenides}
ORAL
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Authors
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Tao Li
- University of Nebraska-Lincoln
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Alexey Lipatov
- University of Nebraska-Lincoln
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Pankaj Sharma
- University of New South Wales
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Hyungwoo Lee
- University of Wisconsin-Madison
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Chang-Beom Eom
- University of Wisconsin-Madison
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Alexander Sinitskii
- University of Nebraska-Lincoln
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Alexei Gruverman
- University of Nebraska-Lincoln
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Atomic-scaled characterization of graphene PN junctions
ORAL
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Authors
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Xiaodong Zhou
- Department of Physics, Columbia University, New York, New York 10027, USA
- Columbia Univ
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Dennis Wang
- Department of Applied Physics and Mathematics, Columbia University, New York, New York 10027, USA
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Ali Dadgar
- Department of Physics, Columbia University, New York, New York 10027, USA
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Pratik Agnihotri
- College of Nanoscale Science and Engineering, The State University of New York, Albany, New York 12203, USA
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Ji Ung Lee
- College of Nanoscale Science and Engineering, The State University of New York, Albany, New York 12203, USA
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Mark C. Reuter
- IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
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Frances M. Ross
- IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
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Abhay N. Pasupathy
- Department of Physics, Columbia University, New York, New York 10027, USA
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ABSTRACT WITHDRAWN
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