Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density, as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states[1]. [1] : Veyrat et al., Nano Lett., Article ASAP, DOI: 10.1021/acs.nanolett.5b03124
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Authors
Louis Veyrat
IFW-Dresden, Institute for Solid State Research
Fabrice Iacovella
Laboratoire National des Champs Magnétiques Intenses (LNCMI-EMFL)
Joseph Dufouleur
IFW-Dresden, Institute for Solid State Research
Christian Nowka
IFW-Dresden, Institute for Solid State Research
Hannes Funke
IFW-Dresden, Institute for Solid State Research
Ming Yang
Laboratoire National des Champs Magnétiques Intenses (LNCMI-EMFL)
Walter Escoffier
Laboratoire National des Champs Magnétiques Intenses (LNCMI-EMFL)
Michel Goiran
Laboratoire National des Champs Magnétiques Intenses (LNCMI-EMFL)
