Controlling the 2DEG states evolution at a metal/Bi$_2$X$_3$ (X=Se,Te) interface
ORAL
Abstract
We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi$_2$X$_3$ (X=Se, Te) can be controlled by choosing an appropriate kind of metal elements and by applying a low temperature evaporation procedure. In particular, we find that only topological surface states (TSSs) can exist at a Mn/Bi$_2$X$_3$ interface, which would be useful for implementing a TI-based device with surface current channels only. The existence of the TSSs alone at the interface was confirmed by angle-resolved photoemission spectroscopy (ARPES). Based on the ARPES and core-level x-ray photoemission spectroscopy measurements, we propose a cation intercalation model to explain our findings.
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