\textbf{Metal to insulator quantum-phase transition in few-layered ReS}$_{\mathbf{2}}$.

ReS$_{2}$ a layer-independent direct band-gap semiconductor of 1.5 eV implies a potential for its use in optoelectronic applications. Here, we present an overall evaluation of transport and anisotropic Raman of few-layered ReS$_{2}$ FET. ReS$_{2}$ exfoliated on SiO$_{2}$ behaves as an $n$-type semiconductor with an intrinsic carrier mobility surpassing $\mu _{i}$ \textasciitilde 30 cm$^{2}$/Vs at $T =$ 300 K which increases up to \textasciitilde 350 cm$^{2}$/vs at 2 K. Semiconducting behavior is observed at low electron densities $n$, but at high values of $n $the resistivity decreases by a factor \textgreater 7 upon cooling to 2 K and displays a metallic$^{\, }T^{2}$-dependence. The electric-field induced metallic state observed in MoS$_{2}$ was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of $T $and $n$, we find that the metallic state of ReS$_{2}$ results from a second-order metal to insulator transition driven by electronic correlations.