Interlayer Exciton Lifetimes in MoSe2/WSe2 Heterostructures
ORAL
Abstract
Semiconductor heterostructures of two-dimensional (2D) transition-metal dichalcogenides (TMDs) have emerged as an exciting new platform for novel device engineering and physics. A fundamental question for the field is how the strong Coulomb interactions, electronic structure, and underlying valley physics affect the optoelectronic response. While researchers have made significant progress in understanding intralayer exciton dynamics in monolayer TMDs, there is comparatively little understanding of the interlayer excitons that form in their heterostructures. In this talk, we will report on time-resolved photoluminescence experiments of interlayer excitons in MoSe2/WSe2 vertical heterostructures, which show wide tunability with gate and variability with emission energy. We will also discuss the underlying mechanisms for this behavior and show how it can be utilized to generate long-lived valley excitons.
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Authors
Kyle Seyler
Univ of Washington
Department of Physics, University of Washington
No Company Provided
Pasqual Rivera
Univ of Washington
Department of Physics, University of Washington
University of Washington
Hongyi Yu
University of Hong Kong
Department of Physics and Center of Theoretical and Computational Physics, The University of Hong Kong
The Univ of Hong Kong
John Schaibley
Univ of Washington
University of Washington
Jiaqiang Yan
University of Tennessee
University of Tennessee, Knoxville
Oak Ridge National Laboratory
Oak Ridge National Laboratory and University of Tennessee
University of Tennessee, Oak Ridge National Lab
D Mandrus
University of Tennessee
University of Tennessee, Knoxville
University of Tennessee and Oak Ridge National Lab
