Microwave polarization angle study of the radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2D electron system under dc current bias

ORAL

Abstract

Microwave-induced magnetoresistance oscillations followed by the vanishing resistance states are a prime representation of non-equilibrium transport phenomena in two-dimensional electron systems (2DES). The effect of a dc current bias on the nonlinear response of 2DES with microwave polarization angle under magnetic field is a subject of interest. Here, we have studied the effect of various dc current bias on microwave radiation-induced magnetoresistance oscillations in a high mobility 2DES. Further, we systematically investigate the effect of the microwave polarization angle on the magneto-resistance oscillations at two different frequencies 152.78 GHz and 185.76 GHz. This study aims to better understand the effects of both dc current and microwave polarization angle in the GaAs/AlGaAs system, both of which modify the observed magneto-transport properties

*DOE-BES, Mat'l. Sci. & Eng. Div., DE-SC0001762; ARO W911NF-14-2-0076; ARO W911NF-15-1-0433

Authors

  • Muhammad-Zahir Iqbal

    • Georgia State University, Atlanta, GA 30303
  • H-C. Liu

    • Georgia State University, Atlanta, GA 30303
    • Georgia State University
    • Georgia State Univ
  • M. S. Heimbeck

    • Army Aviation & Missile RD&E Center, Redstone Arsenal, Huntsville, AL 35898
    • Army Aviation \& Missile RD \& E Center, Redstone Arsenal, Huntsville, AL 35898
  • Henry O. Everitt

    • Army Aviation & Missile RD&E Center, Redstone Arsenal, Huntsville, AL 35898 and Dept. of Physics, Duke University, Durham, NC 27708
  • Werner Wegscheider

    • ETH Zurich, Switzerland
    • ETH Zurich
    • ETH-Zurich, 8093 Zurich, Switzerland
  • Ramesh G. Mani

    • Georgia State University, Atlanta, GA 30303
    • Georgia State University