Magneto-transport studies of a few hole GaAs double quantum dot in tilted magnetic fields.

Compared to equivalent electron devices, single-hole spins interact weakly with lattice nuclear spins leading to extended quantum coherence times. This makes p-type Quantum Dots (QD)~particularly attractive for practical quantum devices such as qubit circuits, quantum repeaters, quantum sensors etc. where long coherence time is required.~ Another property of holes is the possibility to tune their g-factor as a result of the strong anisotropy of the valance band.~ Hole g-factors can be conveniently tuned \textit{in situ} from a large value to almost zero by tilting the magnetic field relative to the 2D hole gas surface normal. [1] In this work we explore high-bias magneto-transport properties of a p-type double quantum dot (DQD) device fabricated from a GaAs/AlGaAs heterostructures using lateral split-gate technology.[2]~ A charge detection technique is used to monitor number of holes and tune the p-DQD in a single hole regime around (1,1) and (2,0) occupation states where Pauli spin-blockaded transport is expected. Four states are identified in quantizing magnetic fields within the high-bias current stripe -- three-fold triplet and a singlet which allows determining effective heavy hole g-factor as a function of the tilt angle from 90 to 0 degrees.~ ~[1]~ G. Ares et al., Phys.Rev. Lett. 110, .046602 (2013); [2] L. A. Tracy,et al., App. Phys. Lett. 104\textbf{, }123101 ~(2014).~